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2009/06/20 ver.2 page 1 spc1016 n & p pair enhancement mode mosfet description applications the spc1016 is the dual p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( sot-563 / sc-89-6l) part marking ? n-channel 20v/0.65a,r ds(on) =380m ? @v gs =4.5v 20v/0.55a,r ds(on) =450m ? @v gs =2.5v 20v/0.45a,r ds(on) =800m ? @v gs =1.8v ? p-channel -20v/0.45a,r ds(on) = 0.52 ? @v gs =-4.5v -20v/0.35a,r ds(on) = 0.70 ? @v gs =-2.5v -20v/0.25a,r ds(on) = 0.95 ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-563 (sc-89-6l) package design
2009/06/20 ver.2 page 2 spc1016 n & p pair enhancement mode mosfet pin description pin symbol description 1 s1 source 1 2 g1 gate 1 3 d2 drain 2 4 s2 source 2 5 g2 gate 2 6 d1 drain1 ordering information part number package part marking spc1016s56rg sot-563 c spc1016s56rgb sot-563 c week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spc1016s56rg : tape reel ; pb ? free spc1016s56rgb : tape reel ; pb ? free ; halogen -free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol n-channel p-channel unit drain-source voltage v dss 20 -20 v gate ?source voltage v gss 12 12 v t a =25 0.65 -0.45 continuous drain current(t j =150 ) t a =80 i d 0.45 -0.35 a pulsed drain current i dm 1.0 -1.0 a continuous source current(diode conduction) i s 0.3 -0.3 a t a =25 0.35 power dissipation t a =70 p d 0.19 w operating junction temperature t j -55/150 storage temperature range t stg -55/150
2009/06/20 ver.2 page 3 spc1016 n & p pair enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static v gs =0v,i d = 250ua n-ch 20 drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua p-ch -20 v ds =v gs ,i d =250ua n-ch 0.35 1.0 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua p-ch -0.35 -0.8 v v ds =0v,v gs =12v n-ch 100 gate leakage current i gss v ds =0v,v gs =12v p-ch 100 na v ds = 20v,v gs =0v n-ch 1 v ds =-20v,v gs =0v p-ch -1 v ds = 20v,v gs =0v t j =55 n-ch 10 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 p-ch -10 ua v ds 4.5v,v gs = 5v n-ch 0.7 on-state drain current i d(on) v ds -4.5v,v gs =-5v p-ch -0.7 a v gs =4.5v,i d =0.65a n-ch 0.26 0.38 v gs =-4.5v,i d =-0.45a p-ch 0.42 0.52 v gs =2.5v,i d =0.55a n-ch 0.32 0.45 v gs =-2.5v,i d =-0.35a p-ch 0.58 0.70 v gs =1.8v,i d =0.45a n-ch 0.42 0.80 drain-source on-resistance r ds(on) v gs =-1.8v,i d =-0.25a p-ch 0.75 0.95 ? v ds =10v,i d =0.4a n-ch 1.0 forward transconductance gfs v ds =-10v,i d =-0.25a p-ch 0.4 s i s = 0.15a,v gs =0v n-ch 0.8 1.2 diode forward voltage v sd i s =-0.15a,v gs =0v p-ch -0.8 -1.2 v dynamic n-ch 1.2 1.5 total gate charge q g p-ch 1.5 2.0 n-ch 0.2 gate-source charge q gs p-ch 0.3 n-ch 0.3 gate-drain charge q gd n-channel v ds =10v,v gs =4.5v, i d 0.6a p-channel v ds =-10v,v gs =-4.5v ,i d -0.6a p-ch 0.35 nc n-ch 5 10 t d(on) p-ch 5 10 n-ch 8 15 turn-on time t r p-ch 15 25 n-ch 10 18 t d(off) p-ch 8 15 n-ch 1.2 2.8 turn-off time t f n-channel v dd =10v,r l =10 ? , i d 0.5a v gen =4.5v ,r g =6 ? p-channel v dd =-10v,r l =10 ? , i d -0.4a v gen =-4.5v ,r g =6 ? p-ch 1.4 1.8 ns
2009/06/20 ver.2 page 4 spc1016 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2009/06/20 ver.2 page 5 spc1016 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2009/06/20 ver.2 page 6 spc1016 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2009/06/20 ver.2 page 7 spc1016 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2009/06/20 ver.2 page 8 spc1016 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2009/06/20 ver.2 page 9 spc1016 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2009/06/20 ver.2 page 10 spc1016 n & p pair enhancement mode mosfet sot-563 package outline
2009/06/20 ver.2 page 11 spc1016 n & p pair enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 9f-5, no.3-2, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com

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